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发明名称
Trenched field effect transistor with PN depletion barrier
摘要
申请公布号
EP0726603(A3)
申请公布日期
1997.01.08
申请号
EP19960300793
申请日期
1996.02.06
申请人
SILICONIX INCORPORATED
发明人
FLOYD, BRIAN H.;PITZER, DORMAN C.;HSHEIEH, FWU-IUAN;CHANG, MIKE F.
分类号
H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L29/78
主分类号
H01L29/06
代理机构
代理人
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