发明名称 |
Polishing method for planarizing layer on a semiconductor wafer |
摘要 |
To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate. |
申请公布号 |
GB2267389(B) |
申请公布日期 |
1997.01.08 |
申请号 |
GB19930010909 |
申请日期 |
1993.05.26 |
申请人 |
KABUSHIKI KAISHA * TOSHIBA |
发明人 |
MASAKO * KODERA;HIROYUKI * YANO;ATSUSHI * SHIGETA;RIICHIROU * AOKI;HIROMI * YAJIMA;HARUO * OKANO |
分类号 |
B24B37/04;B24B49/00;B24B49/02;B24B49/04;B24B49/16;C09K3/14;H01L21/3105;H01L21/66;H01L21/768;(IPC1-7):H01L21/304 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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