SEMICONDUCTOR LASER DIODE

摘要

A semiconductor laser diode of pn double hetero junction type which comprises a first active layer 31 formed on a substrate for imparting a main oscillation, a second active layer 32 adjacent to the first active layer in such a manner that at least one of the first and second active layers is formed of a multi quantum well or single quantum well structure, an intermediate clad layer 33 interposed between the first active layer 31 and the second active layer 32 for preventing duplication of wave function of confined electrons of the respective active layers, and an SCH structure 34. 35 provided on at least one of under the first active layer 31 and over second active layer 32 to reduce the refractive index thereof remotely from the active layers. Thus, the semiconductor laser diode can have high characteristic temperature and lower a threshold current at the time of laser oscillation and obtain preferable operation characteristics even under severe environments of temperature condition.