发明名称 Method and device for selectively locking write access to blocks in a memory array using write protect inputs and block enabled status
摘要 A method and device for selectively enabling and disabling write access to flash blocks in a flash memory device. A lock command locks and unlocks a flash block in a flash array containing a plurality of flash blocks. A block data row decoder selects a block data area of the flash block, and a block status row decoder selects a block status area of the flash block. A lock bit in the block status area is programmed to a first logic state if the lock command specifies a lock flash block operation, or to a second logic state if the lock command specifies a release flash block operation. If a write protect input, read from the write protect pin of the flash memory device, indicates that a write lock is enabled and if a block enabled status bit in a block status register corresponding to the block indicates that the block has the write lock, then the lock bit is read and stored into the block enabled status bit in the block status register corresponding to the block. The write protect input is read again from the write protect pin and if the write protect input indicates that the write lock is enabled, and if the block enabled status bit in the block status register corresponding to the block, as updated, indicates that the block has the write lock, then an error is signaled.
申请公布号 US5592641(A) 申请公布日期 1997.01.07
申请号 US19930085546 申请日期 1993.06.30
申请人 INTEL CORPORATION 发明人 FANDRICH, MICKEY L.;FEDEL, SALIM B.;PRICE, THOMAS C.;DURANTE, RICHARD J.;GOULD, GEOFFREY A.;GOODELL, TIMOTHY W.;DOYLE, SCOTT M.
分类号 G11C7/24;G11C16/22;(IPC1-7):G06F12/14 主分类号 G11C7/24
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