Method of manufacturing a silicon on sapphire integrated circuit arrangement

摘要

In order to reduce the leakage current which can occur in N-channel MOS devices formed on a sapphire substrate when subject to incident radiation, a P-type layer is formed at the interface between the substrate and the epitaxial silicon in which the MOS devices are formed. The P-type layer is produced by implanting high energy silicon ions through the epitaxial silicon to back-scatter aluminium from the sapphire interface. Subsequent annealing produces a high quality crystalline structure in the silicon. The improvement in radiation hardness is substantial.