| 发明名称 |
Gate resistor for IGBT |
| 摘要 |
A polysilicon gate resistor consists of a plurality of parallel polysilicon strips extending from gate finger to gate pad. Different numbers of parallel strips can be selected during manufacture by using different contact masks.
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| 申请公布号 |
US5592006(A) |
申请公布日期 |
1997.01.07 |
| 申请号 |
US19950530014 |
申请日期 |
1995.09.19 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
MERRILL, PERRY |
| 分类号 |
H01L29/43;H01L29/739;(IPC1-7):H01L29/76;H01L29/00;H01L29/74;H01L29/94 |
主分类号 |
H01L29/43 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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