| 摘要 |
Fine, sub-micron line features and patterns are created in a sensitized layer on a semiconductor wafer by a beam of Gamma-radiation. A continuous stream of such radiation, such as provided by a pellet of Cobalt-60, is collimated into a fine beam by a tapered collimator, and is gated on and off by a shutter mechanism comprising a distortable-surface device and a beam-blocking device. The fine, collimated beam converts points in a gamma-radiation-sensitive layer on a semiconductor wafer. By moving the wafer relative to the beam (or vice-versa), patterns are created in the layer of radiation-sensitive layer for further processing a layer underlying the radiation-sensitive layer.
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