PRODUCTION OF SILICON SINGLE CRYSTAL HAVING UNIFORM CRYSTAL DEFECT AND APPARATUS THEREFOR

摘要

PURPOSE: To uniformize the defect density of a silicon single crystal by a Czochralski method in the crystal growth direction and improve yield of the single crystal by specifying temperature and passing time at crystal growth of the grown silicon single crystal in producing the single crystal by the Czochralski method. CONSTITUTION: In producing a silicon single crystal by a Czochralski method, time of the grown silicon single crystal passes through the temperature range of 600-700 deg.C in the crystal growing is made to be <=80min. Crystal defect density in the producing method can be measured by heat-treating a wafer cut out from a crystal body part and having about 1mm thickness at 800 deg.C for 4hrs in an oxygen atmosphere and heat-treating at 1000 deg.C for 16hrs, selectively etching a cleavage plane of the resultant wafer, scanning in a radial direction by using an optical microscope and counting with eyes.