SUPERCONDUCTING DEVICE HAVING AN EXTREMELY THIN SUPERCONDUCTING CHANNEL FORMED OF OXIDE SUPERCONDUCTOR MATERIAL

摘要

A superconducting device comprises a superconducting channel constituted of an oxide superconductor thin film formed on a substrate, a source electrode and a drain electrode formed at opposite ends of the superconducting channel so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode, and a gate electrode located on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The gate electrode is formed on an insulating layer formed on the superconducting channel, and the superconducting channel has a thickness of not greater than about five nanometers in a direction of an electric field created by the gate electrode. In addition, the superconducting channel, the source electrode and the drain electrode are formed of an a-axis oriented oxide superconductor thin film.