| 摘要 |
PURPOSE: To obtain the subject member made of silicon carbide, capable of markedly improving its service life through assuredly preventing debonding the chemical vapor deposition layer thereon, thus useful for the reaction tubes for use in semiconductor diffusion ovens. CONSTITUTION: This member 1 for heat treatment oven is obtained by coating the surface of porous base material 2 consisting of silicon carbide sintered compact with silicon carbide chemical vapor deposition layer 3. This chemical vapor deposition layer 3 is made up, in series, of an airtight dense coating layer 3a on the surface layer 2a of the base material, a completely permeated layer 3b compactly filled among the silicon carbide grains 2'b in the shallow layer portion 2b of the surface layer 2a, and an incompletely permeated layer 3c formed without filling among the silicon carbide grains 2'c in the deep layer portion 2c of the surface layer 2a and adhered to the surface of the grains 2'c in a filmy fashion. It is preferable that the thickness H of the chemical vapor deposition layer 3 be >=200μm. |
