发明名称 |
Non-volatile analog memory cell with double polysilicon level |
摘要 |
Non-volatile memory cell with double level of polycrystalline silicon has a source region (38), a drain region (31), a channel region (34) between said source and drain regions, a floating gate (33), and a control gate (32) in which the channel region area extends into two lateral zones beneath the two gates and perpendicular to the source-drain direction.
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申请公布号 |
US5592418(A) |
申请公布日期 |
1997.01.07 |
申请号 |
US19950367068 |
申请日期 |
1995.01.03 |
申请人 |
SGS-THOMSON MICROELECTRONICS, S.R.L. |
发明人 |
SABATINI, MARCO;KRAMER, ALAN |
分类号 |
H01L21/8247;H01L29/10;H01L29/788;H01L29/792;(IPC1-7):G11C11/40 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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