发明名称 |
Semiconductor MIS field effect transistor with semi-amorphous semiconductor material |
摘要 |
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semi-conductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element may be formed.
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申请公布号 |
US5591987(A) |
申请公布日期 |
1997.01.07 |
申请号 |
US19920928181 |
申请日期 |
1992.08.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;NAGATA, YUJIRO |
分类号 |
H01L21/205;H01L27/142;H01L29/04;H01L29/16;H01L29/161;H01L29/24;H01L29/786;H01L31/0376;H01L31/20;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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