| 摘要 |
forming the first nitride film(1), the first oxide film(2) and the first contact hole(8) to deposit the first conducting material(3), the second oxide film(4), the second conducting material(5) and the third oxide film(6); depositing the third conducting material(7) after forming the second contact hole(9); forming the third conducting material spacer(7a) on both side walls of the second contact hole(9); planarizing the forth oxide film(10); depositing the forth conducting material(11) after etching the layers(10,6,5,4,3) in sequence; forming a castle-like charge storage electrode( M) by forming the forth conducting material spacer(11a) by an anisotropic etching; and completing a capacitor by depositing a conducting material( Ù) for a plate electrode after depositing a dielectric film(12).
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