Hybrid substrate for II - VI semiconductor device

摘要

The hybrid substrate includes a monocrystalline germanium wafer (10) which is covered by a transition layer (16). The transition layer is obtained by MOCVD of zinc selenide, zinc telluride and cadmium telluride in a controlled atmosphere at temperatures between 400 and 600 degrees Celsius. An IR detector built on the hybrid substrate includes an MCT layer (18) obtained by liquid phase epitaxy. An array of IR detectors (25) is then etched in this layer. The detectors are connected via hybrid circuits to CCD read circuits built on a silicon substrate.