| 发明名称 |
SEMICONDUCTOR DEVICE FABRICATION |
| 摘要 |
A method of forming a doped trench as part of the fabrication of a semiconductor device such as a trench gated power device, logic transistor or memory cell. A trench (3) is formed in a semiconductor substrate (1) using a mask (2). The trench is partially filled with electrode material (5) and the side walls of the trench are doped with the mask (2) still in place.
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| 申请公布号 |
CA2220643(A1) |
申请公布日期 |
1997.01.03 |
| 申请号 |
CA19962220643 |
申请日期 |
1996.06.14 |
| 申请人 |
TOTEM SEMICONDUCTOR LIMITED |
发明人 |
EVANS, JONATHAN LESLIE |
| 分类号 |
H01L21/265;H01L21/331;H01L21/336;H01L29/08;H01L29/423;H01L29/739;H01L29/78;(IPC1-7):H01L21/22;H01L21/308 |
主分类号 |
H01L21/265 |
| 代理机构 |
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