Integrated circuit BiMOS fabrication method

摘要

The method for manufacturing an IC consists in covering a monocrystalline silicon substrate (1) with an oxide layer and delimiting two buried n type regions. The two regions are defined by a masking operation. Arsenic ions are then implanted in the substrate areas revealed by an etching operation (20). An annealing treatment is then applied to the substrate. A second masking operation covers the implanted areas which are associated with a NMOS component and a vertical PNP component. A high dose ion implantation is applied to the substrate in order to define N - and N+ regions.