Verfahren zur Bildung feiner Muster eines Halbleiterelements

摘要

A method for forming fine patterns in a semiconductor device comprises oxidizing the upper surface of a prepared wafer (31) to form an oxide film (32), and then coating a photoresist (33) onto the oxidized wafer. The photoresist is then exposed and developed to form photoresist patterns (36). The method prevents foot or uncut occurring at the lower part of the patterns, thus allowing the width of the patterns to be easily controlled. The method is therefore useful for the high integration of semiconductor devices in addition to being high in production yield.