发明名称 TOPOLOGY INDUCED PLASMA ENHANCEMENT FOR ETCHED UNIFORMITY IMPROVEMENT
摘要 A plasma discharge electrode having a front surface with a central portion thereof including outlets for discharging reactant gas which forms a plasma and a peripheral portion substantially surrounding the outlets. The peripheral portion has at least one recess for locally enhancing a density of the plasma formed by the electrode. The recess can be formed in a replaceable insert and the electrode can be made from a single crystal of silicon.
申请公布号 EP0730532(A4) 申请公布日期 1997.01.02
申请号 EP19950902578 申请日期 1994.11.17
申请人 LAM RESEARCH CORPORATION 发明人 MUNDT, RANDALL, S.;KERR, DAVID, R.;LENZ, ERIC, HOWARD
分类号 C23F4/00;H01J37/32;H01L21/302 主分类号 C23F4/00
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