发明名称 |
TOPOLOGY INDUCED PLASMA ENHANCEMENT FOR ETCHED UNIFORMITY IMPROVEMENT |
摘要 |
A plasma discharge electrode having a front surface with a central portion thereof including outlets for discharging reactant gas which forms a plasma and a peripheral portion substantially surrounding the outlets. The peripheral portion has at least one recess for locally enhancing a density of the plasma formed by the electrode. The recess can be formed in a replaceable insert and the electrode can be made from a single crystal of silicon. |
申请公布号 |
EP0730532(A4) |
申请公布日期 |
1997.01.02 |
申请号 |
EP19950902578 |
申请日期 |
1994.11.17 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
MUNDT, RANDALL, S.;KERR, DAVID, R.;LENZ, ERIC, HOWARD |
分类号 |
C23F4/00;H01J37/32;H01L21/302 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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