CO-IMPLANTATION OF ARSENIC AND PHOSPHORUS IN EXTENDED DRAIN REGION FOR IMPROVED PERFORMANCE OF HIGH VOLTAGE NMOS DEVICE,申请号EP19960902685-传众专利搜索

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发明名称	CO-IMPLANTATION OF ARSENIC AND PHOSPHORUS IN EXTENDED DRAIN REGION FOR IMPROVED PERFORMANCE OF HIGH VOLTAGE NMOS DEVICE
摘要
申请公布号	EP0750794(A1)	申请公布日期	1997.01.02
申请号	EP19960902685	申请日期	1996.01.11
申请人	NATIONAL SEMICONDUCTOR CORPORATION	发明人	DEMIRLIOGLU, ESIN, K.;EL-DIWANY, MONIR, H.
分类号	H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L29/78	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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