| 摘要 |
The invention relates to a silicon micromechanically fabricated infrared detector having an infrared radiation absorbing layer (7, 44) deposited on an insulating substrate and a detector (11, 24, 25) for detecting the amount of radiation absorbed in the metallic absorbing layer. According to the invention, on the path of the radiation, prior to the absorbing layer (7, 44) is located an electrically controllable Fabry-Perot interferometer (1, 2, 5) manufactured by silicon micromechanical techniques and having the absorbing layer (7, 44) integrally coupled with one of the mirrors (1, 2) thereof).
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