| 摘要 |
A process simulation method and a process simulator are disclosed wherein a simulation for optimum process conditions for formation of a dielectric film for a capacitor by a chemical vapor deposition method is executed using a non-empirical reaction model. The process simulator comprises an inputting apparatus for inputting parameters required to determine optimum process conditions, which provide the best step coverage for a dielectric film of a capacitor to be formed, as values defining given variation ranges, a storage apparatus for storing vapor phase reactions and film surface reactions individually corresponding to process condition sets each of which is a combination of a plurality of parameters as models obtained by a non-empirical method in advance, a simulation condition setting apparatus for setting process condition sets, a reaction model setting apparatus for recalling models from the storage apparatus in response to the thus set process condition sets, and a simulation execution apparatus for executing simulations in accordance with the thus recalled models and comparing results of the simulations with each other to select optimum process conditions. |
