Substrates and methods for gas phase deposition of semiconductors and other materials

摘要

A novel substrate for growth of material by chemical phase deposition includes a temperature monitoring zone formed by applying a coating of growth preventing material (e.g., SiOx or SiNx) to a portion of the substrate. The temperature of the substrate can be monitored during growth of a desired material using an optical pyrometer having its field of view directed at the temperature monitoring zone.