发明名称 |
Random access memory having flash memory |
摘要 |
A semiconductor nonvolatile memory device including first and second bit lines, a buffer memory connected to the first and second bit lines, an electrically erasable programmable nonvolatile memory connected to the first and second bit lines, a writing latch circuit to which the first and second bit lines are connected in parallel and having a differential sensor type sense amplifier, and a switching circuit for switching the nonvolatile memory and the latch circuit to a nonconnected state at the time of operation of the buffer memory and switching the buffer memory and the latch circuit to a nonconnected state at the time of a writing or erasure operation on the nonvolatile memory.
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申请公布号 |
US5590073(A) |
申请公布日期 |
1996.12.31 |
申请号 |
US19940345695 |
申请日期 |
1994.11.21 |
申请人 |
SONY CORPORATION |
发明人 |
ARAKAWA, HIDEKI;NARIKIYO, TAKASHI |
分类号 |
G11C7/10;G11C14/00;G11C16/02;G11C17/00;(IPC1-7):G11C11/34 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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