| 摘要 |
Disclosed is a magnetoresistive thin-film, which a (110) oriented epitaxial buffer layer 2 made of a body-centered cubic crystalline metal or alloy is formed on a single crystalline substrate 1, thereon with layer a (110) oriented epitaxial Fe/Cr superlattice film on which Fe layers 3 and Cr layers 4 alternately are epitaxially grown, the Fe/Cr superlattice having a structure in which staircase facets which have ridge lines to the <100> direction at (110) surface and have {100} side surfaces stand side by side to the <110> direction. The dispersion of the widths of the staircase facets falls within +/-50%. Also disclosed is a magnetoresistive device which is provided with the above magnetoresistive thin-film and a means for applying a magnetic field parallel to the ridge lines of the staircase facets to the thin-film.
|
