Method of making increased-density flash EPROM that utilizes a series of planarized, self-aligned, intermediate strips of conductive material to contact the drain regions

摘要

A series of self-aligned, intermediate strips of conductive material, which contact each of the drain regions in a corresponding number of columns of drain regions in a flash electrically programmable read-only-memory (EPROM), are formed as a thick layer of planarized polysilicon. By utilizing intermediate strips of conductive material which are formed from a thick layer of polysilicon, the formation of cracks or voids in the intermediate strips of conductive material can be eliminated.