| 摘要 |
A semiconductor nonvolatile memory comprised of a p-type silicon substrate 3, an n+ drain 5 and an n+ source 9, the source and the drain regions defining an MOS channel region 7. On top of the channel region 7 there are laminated a silicon dioxide film 18 and a semiconductor rich oxide film 20 which has been nitrided so as to leave silicon nitride region therein. Further on top of these layers, there is formed a polysilicon film 22, which is etched to form a control electrode. By using the memory cell and appropriate select transistors, a semiconductor nonvolatile memory (EPROM) is constructed.
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