Semiconductor field effect transistor for SRAM or DRAM

摘要

The transistor includes a semiconductor substrate (1) with an main surface and a boron diffusion region (3), both of a first conducting type. Source and drain regions (7) of a second conducting type are deposited on the main surface and have a predetermined distance between them. A gate insulation layer (9) and a gate electrode (11) are provided between the source and drain regions. A nitrogen layer (5) is loaded in beneath the gate insulation layer and between the source and drain regions. The peak concentration of the nitrogen in a depth from the main surface does not exceed 50 nm.