| 摘要 |
FIELD: computer engineering, in particular, power-independent accumulators for memory units. SUBSTANCE: each metal line is zigzag-shaped and by-passes two diffusion lines which numbers are i and i-3 or i+3 depending on even or odd number of i. This results in possibility of individual access to each memory register during writing or reading. Diffusion discharge lines are divided into insulated pieces . Spaces between pieces are located between contacts of metal lines to pieces of two adjacent diffusion lines. This results in possibility to increase tolerance for size and misalignment of layers when contact holes and metal layer are produced. Device may be used in design of read-only memory units, programmable read-only memory units, electronically programmable read-only memory units. EFFECT: halved number of metal lines, increased information density. |
