发明名称 |
Semiconductor-on-insulator device interconnects |
摘要 |
A process for developing conductive interconnect regions between integrated circuit semiconductor devices formed on an insulating substrate utilizes the semiconductor material itself for formation of device interconnect regions. A patterned layer of semiconductor material is formed directly on the surface of an insulating substrate. The patterned layer includes regions where semiconductor devices are to be formed and regions which are to be used to interconnect terminals of predetermined ones of the semiconductor devices. After forming the semiconductor devices in selected regions of the semiconductor material, the regions of the semiconductor material patterned for becoming interconnects are converted to a metallic compound of the semiconductor material.
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申请公布号 |
US5587597(A) |
申请公布日期 |
1996.12.24 |
申请号 |
US19910728917 |
申请日期 |
1991.07.11 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
REEDY, RONALD E.;GARCIA, GRAHAM A.;LAGNADO, ISAAC |
分类号 |
H01L21/768;H01L21/86;H01L23/482;(IPC1-7):H01L27/12;H01L29/04;H01L31/062;H01L31/039 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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