| 摘要 |
PURPOSE: To control an amount of ions entering a substrate and energy by applying a stable dc bias power supply to a substrate by providing a high temperature resistant dc power supply on a holding body of a film formation substrate. CONSTITUTION: Vacuum reaction chambers 12, 13, 14 for performing plasma CVD and a vacuum reaction chamber 15 for sputtering are provided between a carrying-in chamber 11 and a carrying-out chamber 16. A conductive susceptor 2 whereon a substrate 1 is mounted through an insulation material 21 is moved through chambers 11 to 16, and a dc power supply 7 is installed on the susceptor 2. One terminal of the dc power supply is connected to the susceptor 2 of the same electric potential as a grounded supporting stand 3 and the other terminal is connected to the substrate 1 through a bias port 8. A pre-set bias voltage which is chosen to optimize an amount of ions entering the substrate 1 and energy is applied by a dc power supply 7. When an a-Si semiconductor is formed by plasma CVD, the susceptor 2 is heated by a heater 31 of the supporting stand 3. Therefore, a high temperature resistant dc power supply 7 is used. |
