| 摘要 |
PURPOSE: To improve efficiency of bonding treatment, reduce damage to an object to be connected, and make a semiconductor element thin. CONSTITUTION: The wire bonding method consists of the following; a first bonding process wherein a first ball part 17 is formed on a wire 16, and the first ball part 17 is bonded to an inner lead part 13 turning to a first member to be connected, a ball part forming process wherein the wire 16 is led out from a bonding position to the inner lead part 13 with a specified loop, and a second ball part 18 is formed at a specified position of the wire 16, and a second bonding process wherein the formed second ball part 18 is bonded to the electrode pad 11 of a semiconductor element 10 turning to a second member to be connected. |
