| 摘要 |
A semiconductor device is constituted by a semiconductor substrate of a first conductivity type. An associated circuit element has a first electrode, a second electrode, and an impurity diffusion region of a second conductivity type formed in the semiconductor substrate and connected to the second electrode. An insulating layer is formed to cover the circuit element, and a conductive layer is formed on the insulating layer to cover the circuit element and thereby conceals the first and second electrodes and the impurity diffusion region of the circuit element. An aperture is selectively formed in the conductive layer such that respective parts of the first and second electrodes and the impurity diffusion region are exposed through the aperture, enabling transmission of electrons through the aperture and facilitating testing by an electron beam tester. |
