| 摘要 |
<p>1,203,457. Magnetic storage elements. WESTERN ELECTRIC CO. Inc. 28 Sept., 1967 [30 Sept., 1966], No. 44106/67. Heading H1T. [Also in Divisions C7 and H3] A magnetic memory device comprises a magnetic memory material plated on a substrate of an alloy containing Be in an amount up to 4%, the balance, apart from incidental elements, being copper, the incidental elements being so limited that the total content of Fe, Co and Ni is no more than 0À1%. The magnetic memory material may be a permalloy such as 70-90% Ni, 0-10% Mo and the balance Fe and an interlayer of Cu may be formed between the substrate and the memory material coating, The coatings may be applied electrolytically or by vapour deposition and the substrate may be in the form of a cold drawn wire.</p> |
