FERROELECTRIC THIN FILM, ITS MANUFACTURE, AND CAPACITOR-STRUCTURE DEVICE

摘要

PURPOSE: To obtain a ferroelectric thin film having a sufficiently high ferroelectric property and a smooth and compact surface by mixing a paraelectric substance in a ferroelectric substance. CONSTITUTION: At the formation of a ferroelectric film composed only of an ordinary ferroelectric substance, gaps are formed between crystal grains as the crystal grains grow when the ferroelectric substance is grown and, because of the gaps, the smoothness and compactness of the thin film are deteriorated. When such a ferroelectric thin film is used for an element, pinholes are developed in the thin film and the leakage current of the element increases. Therefore, a paraelectric substance is mixed in the ferroelectric substance so as to fill up the gaps between the crystal grains of the ferroelectric substance with the compact paraelectric substance so as to improve the smoothness and compactness of a ferroelectric thin film 5 without deteriorating the ferroelectric property of the film 5 and to obtain an element having an excellent leakage current characteristic. Therefore, the thin film 5 can be micro-finished and can be applied to various kinds of highly integrated devices.