METHOD AND EQUIPMENT OF METAL ETCHING IN INTEGRATED CIRCUIT STRUCTURE THAT IS ACCOMPANIED BY HIGH SELECTIVITY FOR PHOTO RESIST AND REMOVAL OF METAL ETCHING RESIDUAL THING,申请号JP19960068718-传众专利搜索

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发明名称	METHOD AND EQUIPMENT OF METAL ETCHING IN INTEGRATED CIRCUIT STRUCTURE THAT IS ACCOMPANIED BY HIGH SELECTIVITY FOR PHOTO RESIST AND REMOVAL OF METAL ETCHING RESIDUAL THING
摘要
申请公布号	JPH08339989(A)	申请公布日期	1996.12.24
申请号	JP19960068718	申请日期	1996.03.25
申请人	APPLIED MATERIALS INC	发明人	HIROJI HANAWA
分类号	H01L21/302;H01J37/32;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/306	主分类号	H01L21/302
代理机构		代理人
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