| 摘要 |
PURPOSE: To improve the productivity while forming a flat semiconductor film in relation to the title compound semiconductor device including wultzite structure compound semiconductors. CONSTITUTION: The title compound semiconductor device is composed of a semiconductor substrate 11 in cubic system crystalline structure, a cubic system semiconductor layer 12 formed on a main surface of the semiconductor substrate 11 and wultzite structure crystalline semiconductors 13-16 in the same group as that of the cubic system semiconductor layer 12 formed on said layer 12. |
