| 摘要 |
<p>PROBLEM TO BE SOLVED: To control the thickness of a layer under growth by a molecular beam epitaxy(MBE) with a method, wherein the layer is feedback-analyzed for the measured value of a flux, to which growth species are reflected. SOLUTION: A molecular beam epitaxy(MDE) system 200 is constituted of an MBE growth chamber 202, which is provided with a mass spectrometer 204, and a controller 206, which drives a molecular beam outflow cell. The controller 206 responds to a calculation, which is calculated to an output signal of the mass spectrometer 204, and a proscribed model and may include a personal computer programmed so as to control a diffusion cell shutter. The mass spectrometer 204 outputs a signal, which is incident on a wafer in the chamber 202 and shows the amount of atoms, this output and a process model are combined with each other, whereby the thickness of a layer under growth at the present time in a device and the thickness of a layer to be grown thicker can be decided. Thereby, a growth rate of a molecular beam epitaxial layer can be measured accurately during the deposition of the layer.</p> |
