发明名称 Synchronous memory allowing early read command in write to read transitions
摘要 A synchronous random access memory, such as a synchronous dynamic random access memory or a synchronous graphic random access memory, is responsive to command signals and includes a bank memory array. A command decoder/controller responds to command signals to initiate, in a first system clock cycle, a burst write command controlling a burst write operation to transfer multiple input data sets to the bank memory array. When the synchronous random access memory is programmed with a read latency of three or more, the command decoder/controller responds to command signals to initiate, in a second system clock cycle, a read command controlling a read operation to transfer at least one output data set from the bank memory array. One of the multiple input data sets transferred during the write operation is input into the memory device during the second system clock cycle.
申请公布号 US5587961(A) 申请公布日期 1996.12.24
申请号 US19960601290 申请日期 1996.02.16
申请人 MICRON TECHNOLOGY, INC. 发明人 WRIGHT, JEFFREY P.;ZHENG, HUA
分类号 G11C7/10;(IPC1-7):G11C8/00 主分类号 G11C7/10
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