| 摘要 |
PURPOSE: To reduce an ununiformly crystallized strip part generated by the overlapped irradiation with a laser beam. CONSTITUTION: A non-single crystal semiconductor thin film 13 is formed on an insulated board 1. The semiconductor thin film 13 is crystallized by irradiation with a laser beam 4. A thin film transistor is formed using the crystallized semiconductor thin film 13 as a channel region. In an irradiation process, a laser beam 4 is intermittently projected along X-direction (scanning direction) while the beam is partially overlapped. At this time, the sectional strength of the laser beam 4 has almost trapezoidal distribution in the X-direction. The width S of the gradient part 7 of the trapezoidal distribution is controlled to 100μm or smaller. As a result, the width (w) of the ununiformly crystallized strip part, left in the X-direction which orthogonally intersects with X-direction, can be suppressed to 7μm or smaller.
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