| 摘要 |
NAND cell strings(10,12) formed by several memory transistors(M1 - M16), whose channels are connected serially by a source/drain region, comprising a floating gate(18) and a control gate(22); the first selection means(ST1) connecting one terminal of the NAND cell string to its corresponding bit line; a resistor(30) which is connected between the first selection means and the bit line, having a fixed resistance; and an amplifying device providing the read current flowing through the NAND cell string to the bit line after amplifying the read current.
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