PATTERNING METHOD OF SEMICONDUCTOR DEVICE

摘要

forming an etching layer(b) on a substrate; forming an ARC(Anti-reflection coating) film(c) on the etching layer(b); exposing the ARC film to UV or plasma-processing the ARC film; forming a resist layer(d) on the ARC film; forming a resist pattern by aligning to expose and to develop the resist layer; etching the ARC film and the etching layer by using the resist pattern to remove the resist pattern.