METHOD FOR MAKING ISOLATION REGIONS BETWEEN SEMICONDUCTOR COMPONENTS

摘要

forming the first oxide film(2), the first polysilicon(3) and a nitride film(4) on a silicon substrate(1) to remove the nitride film(4) and the first polysilicon(3) on a field region selectively by defining an active region and the field region; forming the second polysilicon side wall(8) on the side wall of the second oxide film(6) by an etch-back of the second oxide film(6) and the second polysilicon(7); removing the second oxide film to form the third polysilicon(9); forming the forth polysilicon(10) after etching the second oxide film; and forming a field oxide film(11) by a thermal process in O2 atmosphere.