METHOD OF MANUFACTURING THE ISOLATION ELEMENTS ON THE SEMICONDUCTOR DEVICE

摘要

depositing the first insulator(2) for a pad, the first semiconductor layer(3), the second semiconductor layer(4) and the second insulator(5) on a semiconductor substrate(1) in sequence; removing the second insulator on a field region selectively by defining the field region and an active region; forming a field oxide film(7) by a thermal process to remove the second insulator and the second semiconductor layer; and removing the first semiconductor layer by an wet etching after oxidizing the first semiconductor layer.