Verfahren zur Herstellung eines abstimmbaren Halbleiterlasers
摘要
In a method of making a tunable twin guide (TTG) type tunable semiconductor laser, over the surface of a semiconductor substrate (5) of one conductivity type, a tuning layer (22), a central layer (23) of the opposite conductivity type, and an active layer (24) are sequentially deposited over one another by a selective epitaxy method such as metal organic vapor phase epitaxy (MOVPE). Each layer is stripe-shaped. This method differs from conventional methods in which the processing of semiconductor elements for defining the current path/optical waveguide inside the laser is carried out by etching. <IMAGE>
申请公布号
DE69215160(D1)
申请公布日期
1996.12.19
申请号
DE1992615160
申请日期
1992.08.07
申请人
NEC CORP., TOKIO/TOKYO, JP
发明人
SAKATA, YASUTAKA, MINATO-KU, TOKYO 108-01, JP;YAMAGUCHI, MASAYUKI, MINATO-KU, TOKYO 108-01, JP;SASAKI, TATSUYA, MINATO-KU, TOKYO 108-01, JP