| 摘要 |
1280719 Semi-conductor devices SONY CORP 5 Nov 1969 [5 Nov 1968] 54266/69 Heading H1K A magnetic field detecting device comprises a semi-conductor body 2 of intrinsic, P- or N-type material having therein two P-type (or N-type) regions 4, 5 and two N-type (P-type) regions 7, 8. The regions 4, 8 carry main current electrodes 9, 12 while the regions 5, 7, which are situated on opposite sides of the main current path, are connected together via electrodes 10, 11 and connection 13. The output voltage, measured between electrodes 10 and 12, is dependent upon the magnitude and direction of an applied magnetic field, and the output voltage/field characteristic may be adjusted by placing a variable resistor either between the electrodes 9 and 10 or between the electrodes 10 and 12. The body 2 may be of Ge, Si or an intermetallic compound. In an intrinsic Ge body the P-type regions 4, 5 are formed by alloying in In/Sn alloy, the regions 7, 8 being formed from Sb/Sn alloy. The regions 5, 7 may, in a modification be situated on opposite side faces of the body 2, or all four regions may be diffused into one of the major faces. An additional connected pair of opposed electrodes (34,35), Fig. 12 (not shown), may also be provided, the output voltage being measured between the two pairs. |
