| 摘要 |
<p>For the highly repeatable growth of high-quality semiconductor polycrystals with excellent crystallographic properties, at a low cost, there are provided a process for producing a polycrystalline semiconductor including charging a raw semiconductor material into a crucible (9) with semiconductor seed crystals placed on its bottom in an atmosphere inert to the semiconductor, heating to melt the raw semiconductor material in the crucible (9) by heating means (5) while depriving the bottom of the crucible (9) of heat to maintain the underside temperature T1 of the bottom below the melting point of the raw semiconductor material, and then cooling the crucible (9) to solidify the melted material, wherein the underside temperature T1 of the bottom of the crucible under heating is measured, and the heating by the heating means (5) is suspended when the rate DELTA t of time-dependent change of the temperature increases over a predetermined value, to thereby melt only the raw semiconductor material, substantially without melting the seed crystals, and the melted raw material is then solidified to grow a polycrystal from the seed crystals, as well as a manufacturing apparatus therefor. <IMAGE></p> |
