Ferroelectric capacitor for semiconductor integrated circuit and method for manufacturing the same

摘要

A ferroelectric capacitor comprising a lower electrode (13A), a ceramic capacity film (14A) made of a ferroelectric substance and an upper electrode (15A) is provided on a substrate insulating film (12) formed on a semiconductor substrate (11). A layer insulating film (16) is formed on the semiconductor substrate so as to cover the ferroelectric capacitor. An electrode wiring (17) is formed on the layer insulating film (16). A length L of the surface of the ceramic capacity film which is present between an intersection of the side of the upper electrode (15A) and the upper face of the ceramic capacity film (14A) and an intersection of the side of the ceramic capacity film (14A) and the upper face of the lower electrode (13A) and a thickness D of the ceramic capacity film (14A) have a relationship of L >/= 2D.