| 摘要 |
PURPOSE:To reduce the cell area as a whole by forming, on an insulating substrate, two layered structures each consisting of a first electric conductive electrode, a first semiconductor, a second semiconductor or insulator, a third semiconductor and a second conductive electrode, providing a fourth amorphous semiconductor for forming channels on their side peripheries, and constituting an IGFET with P and N type channels by using respective side peripheries. CONSTITUTION:A first electric conductive film 2 of tin oxide or the like is adhered on a glass substrate 1 so as to serve as a lower electrode, and is provided with predetermined apertures. A P type first amorphous Si layer 3 is deposited on the film 2, and only the region 10 for forming a P-I-P structure is covered with a photoresist film 71 so that the exposed region of the film 3 is removed by etching. An N type amorphous Si layer 3' is adhered on the whole surface. After that, the film 71 is removed together with the layer 3' adhered thereon, and a second semiconductor or insulator 4 is provided on the plane defined by the residual layer 3' for forming an N-I-N stracture and by the layer 3 connected thereto. Third semiconductors 5 and 5' are adhered on the films 3 and 3', respectively, so as to be opposed to each other, and an aperture is formed between them so that the both sides thereof are used for a C-IGFET. |
