发明名称 |
Method and apparatus for producing transparent conductive film |
摘要 |
A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target (14) at 600 Oe or greater as well as by charging the target (14) with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The apparatus has a vacuum chamber (1) adapted to support therein a substrate (11) and a target (14) in an opposed relationship for forming by sputtering the transparent conductive film on the substrate (11) by plasma discharging generated therebetween. The apparatus has a device (16) for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target (14), a DC power supply (19) for charging the target (14) with a DC electric field, and an RF power supply (20) for charging the target (14) with an RF electric field superimposed on the DC electric field. <IMAGE> |
申请公布号 |
EP0447850(B1) |
申请公布日期 |
1996.12.18 |
申请号 |
EP19910102978 |
申请日期 |
1991.02.27 |
申请人 |
NIHON SHINKU GIJUTSU KABUSHIKI KAISHA |
发明人 |
ISHIBASHI, SATORU;NAKAMURA, KYUZO;HIGUCHI, YASUSHI;KOMATSU, TAKASHI;MURATA, YUZO;OTA, YOSHIFUMI |
分类号 |
C23C14/08;C23C14/34;C23C14/35;H01L21/203;H01L21/285 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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