发明名称 Tri-state programmable output interface device for CMOS memory
摘要 <p>The interface includes a control stage (1) connected in series with two inverting stages (2,3). The control stage receives input signals (i,e), delivered by a memory, and generates logic signals on two outputs (A,B). The inverted signals (E,F) are applied to a deviation reducing circuit (4) connected to an output stage (5). The deviation reducing circuit comprises a switching module connected between the output of the inverting stage (3) and a reference voltage (Vss). A second switching module is connected between the other output of the inverter and a supply voltage (Vcc). All the interface stages are built using NMOS and PMOS transistors.</p>
申请公布号 EP0749126(A1) 申请公布日期 1996.12.18
申请号 EP19960401228 申请日期 1996.06.07
申请人 MATRA MHS 发明人 GERBER, REMI;SILLORAY, JANICK
分类号 H03K19/0175;G11C7/10;G11C11/4093;G11C11/4096;H03K19/0948;(IPC1-7):G11C7/00;G11C11/409 主分类号 H03K19/0175
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